Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
VSe2 is with high electrical conductivity and high work function, thus it is beneficial for the carrier transport in the optoelectronic devices. However, the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood. In this work, we fabr...
| Հիմնական հեղինակներ: | , , , , , , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | English |
| Հրապարակվել է: |
Elsevier
2021-05-01
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| Շարք: | Journal of Materiomics |
| Խորագրեր: | |
| Առցանց հասանելիություն: | http://www.sciencedirect.com/science/article/pii/S2352847820305165 |