Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

Abstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT, an N‐well is formed by phosphorus ion implantation and...

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Bibliographic Details
Main Authors: Rui Jin, Yaohua Wang, Li Li, Longlai Xu, Kui Pu, Jun Zeng, Mohamed Darwish
Format: Article
Language:English
Published: Hindawi-IET 2021-05-01
Series:IET Circuits, Devices and Systems
Subjects:
buried layers
insulated gate bipolar transistors
ion implantation
phosphorus
semiconductor device models
technology CAD (electronics)
Online Access:https://doi.org/10.1049/cds2.12022

Internet

https://doi.org/10.1049/cds2.12022

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