Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT
Abstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT, an N‐well is formed by phosphorus ion implantation and...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Hindawi-IET
2021-05-01
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| Series: | IET Circuits, Devices and Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/cds2.12022 |
| _version_ | 1827079741431087104 |
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| author | Rui Jin Yaohua Wang Li Li Longlai Xu Kui Pu Jun Zeng Mohamed Darwish |
| author_facet | Rui Jin Yaohua Wang Li Li Longlai Xu Kui Pu Jun Zeng Mohamed Darwish |
| author_sort | Rui Jin |
| collection | DOAJ |
| description | Abstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT, an N‐well is formed by phosphorus ion implantation and drive‐in for creating the CS layer, whereas, in the BCS‐IGBT, the CS layer is formed by forming a buried layer implant followed by growing an epitaxial layer. It is found that, at blocking voltage of 5700 V, the BCS‐IGBT achieves an on‐state voltage, VCEsat, of 2.04 V at a current density of 75 A/cm2 for a gate voltage of 15 V. Under the same conditions, the on‐state voltage of DCS‐IGBT is 2.32 V, which is about 0.28 V higher than that of the BCS‐IGBT at room temperature. Additionally, at 125°C the VCEsat of the DCS‐IGBT is about 0.38 V higher than that of the BCS‐IGBT. TCAD simulations are employed to investigate and explain the electro‐thermal characteristics differences between these two devices. Furthermore, the ruggedness of the both devices are studied and compared. It is found that the DCS‐IGBT is more rugged than BCS‐IGBT, for example the short‐circuit withstanding time (SCWT) of DCS‐IGBT and BCS‐IGBT are 22 and 16 µs, respectively. |
| first_indexed | 2024-03-09T07:40:47Z |
| format | Article |
| id | doaj.art-ed8bb2ec2f9f4f59a6da75c885274b7a |
| institution | Directory Open Access Journal |
| issn | 1751-858X 1751-8598 |
| language | English |
| last_indexed | 2025-03-20T02:50:23Z |
| publishDate | 2021-05-01 |
| publisher | Hindawi-IET |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj.art-ed8bb2ec2f9f4f59a6da75c885274b7a2024-10-03T07:27:45ZengHindawi-IETIET Circuits, Devices and Systems1751-858X1751-85982021-05-0115325125910.1049/cds2.12022Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBTRui Jin0Yaohua Wang1Li Li2Longlai Xu3Kui Pu4Jun Zeng5Mohamed Darwish6State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Company Limited Beijing ChinaState Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Company Limited Beijing ChinaState Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Company Limited Beijing ChinaMaxPower Semiconductor Inc. Chengdu ChinaMaxPower Semiconductor Inc. Chengdu ChinaMaxPower Semiconductor Inc. San Jose California USAMaxPower Semiconductor Inc. San Jose California USAAbstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT, an N‐well is formed by phosphorus ion implantation and drive‐in for creating the CS layer, whereas, in the BCS‐IGBT, the CS layer is formed by forming a buried layer implant followed by growing an epitaxial layer. It is found that, at blocking voltage of 5700 V, the BCS‐IGBT achieves an on‐state voltage, VCEsat, of 2.04 V at a current density of 75 A/cm2 for a gate voltage of 15 V. Under the same conditions, the on‐state voltage of DCS‐IGBT is 2.32 V, which is about 0.28 V higher than that of the BCS‐IGBT at room temperature. Additionally, at 125°C the VCEsat of the DCS‐IGBT is about 0.38 V higher than that of the BCS‐IGBT. TCAD simulations are employed to investigate and explain the electro‐thermal characteristics differences between these two devices. Furthermore, the ruggedness of the both devices are studied and compared. It is found that the DCS‐IGBT is more rugged than BCS‐IGBT, for example the short‐circuit withstanding time (SCWT) of DCS‐IGBT and BCS‐IGBT are 22 and 16 µs, respectively.https://doi.org/10.1049/cds2.12022buried layersinsulated gate bipolar transistorsion implantationphosphorussemiconductor device modelstechnology CAD (electronics) |
| spellingShingle | Rui Jin Yaohua Wang Li Li Longlai Xu Kui Pu Jun Zeng Mohamed Darwish Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT IET Circuits, Devices and Systems buried layers insulated gate bipolar transistors ion implantation phosphorus semiconductor device models technology CAD (electronics) |
| title | Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT |
| title_full | Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT |
| title_fullStr | Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT |
| title_full_unstemmed | Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT |
| title_short | Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT |
| title_sort | comparative study of electro thermal characteristics of 4500 v diffusion cs igbt and buried cs igbt |
| topic | buried layers insulated gate bipolar transistors ion implantation phosphorus semiconductor device models technology CAD (electronics) |
| url | https://doi.org/10.1049/cds2.12022 |
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