Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

Abstract This article compares the major characteristics of the Insulated Gate Bipolar Transistor with Diffusion Carrier Stored (CS) layer (DCS‐IGBT) and the Insulated Gate Bipolar Transistor with the Buried CS layer (BCS‐IGBT). In the DCS‐IGBT, an N‐well is formed by phosphorus ion implantation and...

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Hlavní autoři: Rui Jin, Yaohua Wang, Li Li, Longlai Xu, Kui Pu, Jun Zeng, Mohamed Darwish
Médium: Článek
Jazyk:English
Vydáno: Hindawi-IET 2021-05-01
Edice:IET Circuits, Devices and Systems
Témata:
buried layers
insulated gate bipolar transistors
ion implantation
phosphorus
semiconductor device models
technology CAD (electronics)
On-line přístup:https://doi.org/10.1049/cds2.12022

Internet

https://doi.org/10.1049/cds2.12022

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