Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics

Thermal transport properties in GaAs (110)/GaAs (100) and GaAs/InAs interfaces by Reverse Non-equilibrium Molecular Dynamics

It is well known that the physics of thermal management is quite challenging as electronic device sizes are miniaturized and new materials are developed. This study calculates the thermal interface conductance (TIC), thermal interface resistance (TIR) and thermal grain conductivity across GaAs(110)...

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Bibliographic Details
Main Authors: O.N. Nenuwe, O.E. Agbalagba
Format: Article
Language:English
Published: Joint Coordination Centre of the World Bank assisted National Agricultural Research Programme (NARP) 2019-11-01
Series:Journal of Applied Sciences and Environmental Management
Subjects:
Interface conductance
thermal resistance
grain conductivity
temperature.
Online Access:https://www.ajol.info/index.php/jasem/article/view/191394

Internet

https://www.ajol.info/index.php/jasem/article/view/191394

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