Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Abstract Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear conductance updates during training are efficiently essential to train neural networks. Although many different analog memristors have been pro...

Full description

Bibliographic Details
Main Authors: Keonhee Kim, Jae Gwang Lim, Su Man Hu, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Gyu Weon Hwang, Kyeong-Seok Lee, Seongsik Park, Wook-Seong Lee, Byeong-Kwon Ju, Jong Keuk Park, Inho Kim
Format: Article
Language:English
Published: Nature Portfolio 2023-09-01
Series:NPG Asia Materials
Online Access:https://doi.org/10.1038/s41427-023-00495-8

Internet

https://doi.org/10.1038/s41427-023-00495-8

Similar Items