Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of a...

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Bibliographic Details
Main Authors: Viktor Shamakhov, Dmitriy Nikolaev, Sergey Slipchenko, Evgenii Fomin, Alexander Smirnov, Ilya Eliseyev, Nikita Pikhtin, Peter Kop`ev
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Nanomaterials
Subjects:
MOCVD
selective area epitaxy
selective area growth
photoluminescence
atomic force microscopy
semiconductors
Online Access:https://www.mdpi.com/2079-4991/11/1/11

Internet

https://www.mdpi.com/2079-4991/11/1/11

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