Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows
Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of a...
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MDPI AG
2020-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/1/11 |
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| author | Viktor Shamakhov Dmitriy Nikolaev Sergey Slipchenko Evgenii Fomin Alexander Smirnov Ilya Eliseyev Nikita Pikhtin Peter Kop`ev |
| author_facet | Viktor Shamakhov Dmitriy Nikolaev Sergey Slipchenko Evgenii Fomin Alexander Smirnov Ilya Eliseyev Nikita Pikhtin Peter Kop`ev |
| author_sort | Viktor Shamakhov |
| collection | DOAJ |
| description | Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO<sub>2</sub> mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window. |
| first_indexed | 2024-03-10T13:50:51Z |
| format | Article |
| id | doaj.art-eda89ea5d45e49edb27208d293db507a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T13:50:51Z |
| publishDate | 2020-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-eda89ea5d45e49edb27208d293db507a2023-11-21T02:12:27ZengMDPI AGNanomaterials2079-49912020-12-011111110.3390/nano11010011Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide WindowsViktor Shamakhov0Dmitriy Nikolaev1Sergey Slipchenko2Evgenii Fomin3Alexander Smirnov4Ilya Eliseyev5Nikita Pikhtin6Peter Kop`ev7Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaElfolum Ltd., 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaIoffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, RussiaSelective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO<sub>2</sub> mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.https://www.mdpi.com/2079-4991/11/1/11MOCVDselective area epitaxyselective area growthphotoluminescenceatomic force microscopysemiconductors |
| spellingShingle | Viktor Shamakhov Dmitriy Nikolaev Sergey Slipchenko Evgenii Fomin Alexander Smirnov Ilya Eliseyev Nikita Pikhtin Peter Kop`ev Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows Nanomaterials MOCVD selective area epitaxy selective area growth photoluminescence atomic force microscopy semiconductors |
| title | Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows |
| title_full | Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows |
| title_fullStr | Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows |
| title_full_unstemmed | Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows |
| title_short | Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows |
| title_sort | surface nanostructuring during selective area epitaxy of heterostructures with ingaas qws in the ultra wide windows |
| topic | MOCVD selective area epitaxy selective area growth photoluminescence atomic force microscopy semiconductors |
| url | https://www.mdpi.com/2079-4991/11/1/11 |
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