Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film
Phase-change memory (PCM) utilizes the fast reversible phase transition between crystalline and amorphous chalcogenide phase-change materials to achieve the data storage. The rather large density difference between crystalline and amorphous phases will induce device failure with repeated switching....
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5092633 |