Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film
Phase-change memory (PCM) utilizes the fast reversible phase transition between crystalline and amorphous chalcogenide phase-change materials to achieve the data storage. The rather large density difference between crystalline and amorphous phases will induce device failure with repeated switching....
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5092633 |
| _version_ | 1818041600053346304 |
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| author | Bin liu Shuwei Hu Jian Zhou Zhimei Sun |
| author_facet | Bin liu Shuwei Hu Jian Zhou Zhimei Sun |
| author_sort | Bin liu |
| collection | DOAJ |
| description | Phase-change memory (PCM) utilizes the fast reversible phase transition between crystalline and amorphous chalcogenide phase-change materials to achieve the data storage. The rather large density difference between crystalline and amorphous phases will induce device failure with repeated switching. Further, the melting-quenching process induced amorphous-crystalline phase-change needs high energy consumption. In this work, reversible resistance switching is observed in crystalline Ge1Sb4Te7 ribbons driven by voltage polarity, without amorphous-crystalline phase-change. Consequently, the large density variation and the high energy consumption are avoided, which overcomes those two restrictions of PCM. Moreover, on the basis of ab initio calculations, the underlying mechanism is further analyzed and it is concluded that this switching is induced by the reversible swapping of antimony between its lattice site and the center of the Te-Te van der Waals bilayers. |
| first_indexed | 2024-12-10T08:33:00Z |
| format | Article |
| id | doaj.art-edbadab270214c428469b7ae27723921 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T08:33:00Z |
| publishDate | 2019-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-edbadab270214c428469b7ae277239212022-12-22T01:56:03ZengAIP Publishing LLCAIP Advances2158-32262019-03-0193035131035131-410.1063/1.5092633048903ADVPolarity-dependent resistance switching in crystalline Ge1Sb4Te7 filmBin liu0Shuwei Hu1Jian Zhou2Zhimei Sun3School of Materials Science and Engineering and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, ChinaSchool of Materials Science and Engineering and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, ChinaSchool of Materials Science and Engineering and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, ChinaSchool of Materials Science and Engineering and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, ChinaPhase-change memory (PCM) utilizes the fast reversible phase transition between crystalline and amorphous chalcogenide phase-change materials to achieve the data storage. The rather large density difference between crystalline and amorphous phases will induce device failure with repeated switching. Further, the melting-quenching process induced amorphous-crystalline phase-change needs high energy consumption. In this work, reversible resistance switching is observed in crystalline Ge1Sb4Te7 ribbons driven by voltage polarity, without amorphous-crystalline phase-change. Consequently, the large density variation and the high energy consumption are avoided, which overcomes those two restrictions of PCM. Moreover, on the basis of ab initio calculations, the underlying mechanism is further analyzed and it is concluded that this switching is induced by the reversible swapping of antimony between its lattice site and the center of the Te-Te van der Waals bilayers.http://dx.doi.org/10.1063/1.5092633 |
| spellingShingle | Bin liu Shuwei Hu Jian Zhou Zhimei Sun Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film AIP Advances |
| title | Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film |
| title_full | Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film |
| title_fullStr | Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film |
| title_full_unstemmed | Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film |
| title_short | Polarity-dependent resistance switching in crystalline Ge1Sb4Te7 film |
| title_sort | polarity dependent resistance switching in crystalline ge1sb4te7 film |
| url | http://dx.doi.org/10.1063/1.5092633 |
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