Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells

Resonant tunneling of electrons in AlSb/GaInAsSb double barrier quantum wells

We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitter regions are comprised of the lattice-matched qu...

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Bibliographic Details
Main Authors: Edgar David Guarin Castro, Florian Rothmayr, Sebastian Krüger, Georg Knebl, Anne Schade, Johannes Koeth, Lukas Worschech, Victor Lopez-Richard, Gilmar Eugenio Marques, Fabian Hartmann, Andreas Pfenning, Sven Höfling
Format: Article
Language:English
Published: AIP Publishing LLC 2020-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0008959

Internet

http://dx.doi.org/10.1063/5.0008959

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