Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate

This study was conducted to determine whether the simultaneous injections of Ar+ ions and tetraethyl orthosilicate (TEOS) to a substrate are able to fabricate a film on the substrate. The Ar+ ion energy was 100 eV. After the injections, we found a film deposited on the substrate. Following the analy...

Full description

Bibliographic Details
Main Authors: Satoru Yoshimura, Satoshi Sugimoto, Takae Takeuchi, Masato Kiuchi
Format: Article
Language:English
Published: Elsevier 2023-04-01
Series:Heliyon
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2405844023018509