Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET

Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET

High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer char...

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Bibliographic Details
Main Authors: Jing Jiang, Shaogang Wang, Xu Liu, Jianhui Liu, Jun Li, Dexiang Zhou, Guoqi Zhang, Huaiyu Ye, Chunjian Tan
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Electronics
Subjects:
electron irradiation
transfer characteristics
degradation
Si/SiO<sub>2</sub> interface
first-principles calculation
interface charge density
Online Access:https://www.mdpi.com/2079-9292/11/13/2076

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https://www.mdpi.com/2079-9292/11/13/2076

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