Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET
High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer char...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-07-01
|
| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/13/2076 |
| _version_ | 1797480379789082624 |
|---|---|
| author | Jing Jiang Shaogang Wang Xu Liu Jianhui Liu Jun Li Dexiang Zhou Guoqi Zhang Huaiyu Ye Chunjian Tan |
| author_facet | Jing Jiang Shaogang Wang Xu Liu Jianhui Liu Jun Li Dexiang Zhou Guoqi Zhang Huaiyu Ye Chunjian Tan |
| author_sort | Jing Jiang |
| collection | DOAJ |
| description | High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer characteristics are significantly recovered by applying a low electric field with a long duration. When the electric field and stress time are up to a certain value, the threshold voltage almost approaches the limitation, which is less than that before irradiation. Meanwhile, the effect of temperature on the recovery of the irradiated devices is also demonstrated. The result indicates that a high temperature of 175 °C used for the irradiated devices’ annealing does not play a role in promoting the recovery of transfer characteristics. In addition, to obtain a deep-level understanding of threshold degradation, the first-principles calculations of three Si/SiO<sub>2</sub> interfaces are performed. It is found that new electronic states can be clearly observed in the conduction bans and valence bands after the Si-H/-OH bonds are broken by electron irradiation. However, their distribution depends on the selection of the passivation scheme. Ultimately, it can be observed that the threshold voltage linearly decreases with the increase in interface charge density. These results can provide helpful guidance in the deep interpretation of threshold degradation and the recovery of the irradiated super-junction devices. |
| first_indexed | 2024-03-09T22:00:05Z |
| format | Article |
| id | doaj.art-edee753897ea4922a7364a1d62fc3fb3 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-09T22:00:05Z |
| publishDate | 2022-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-edee753897ea4922a7364a1d62fc3fb32023-11-23T19:52:29ZengMDPI AGElectronics2079-92922022-07-011113207610.3390/electronics11132076Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFETJing Jiang0Shaogang Wang1Xu Liu2Jianhui Liu3Jun Li4Dexiang Zhou5Guoqi Zhang6Huaiyu Ye7Chunjian Tan8Academy for Engineering & Technology, Fudan University, Shanghai 200433, ChinaFaculty of EEMCS, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The NetherlandsFaculty of EEMCS, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The NetherlandsSky Chip Interconnection Technology Co., Ltd., Shenzhen 518117, ChinaSky Chip Interconnection Technology Co., Ltd., Shenzhen 518117, ChinaSky Chip Interconnection Technology Co., Ltd., Shenzhen 518117, ChinaAcademy for Engineering & Technology, Fudan University, Shanghai 200433, ChinaFaculty of EEMCS, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The NetherlandsFaculty of EEMCS, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The NetherlandsHigh electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer characteristics are significantly recovered by applying a low electric field with a long duration. When the electric field and stress time are up to a certain value, the threshold voltage almost approaches the limitation, which is less than that before irradiation. Meanwhile, the effect of temperature on the recovery of the irradiated devices is also demonstrated. The result indicates that a high temperature of 175 °C used for the irradiated devices’ annealing does not play a role in promoting the recovery of transfer characteristics. In addition, to obtain a deep-level understanding of threshold degradation, the first-principles calculations of three Si/SiO<sub>2</sub> interfaces are performed. It is found that new electronic states can be clearly observed in the conduction bans and valence bands after the Si-H/-OH bonds are broken by electron irradiation. However, their distribution depends on the selection of the passivation scheme. Ultimately, it can be observed that the threshold voltage linearly decreases with the increase in interface charge density. These results can provide helpful guidance in the deep interpretation of threshold degradation and the recovery of the irradiated super-junction devices.https://www.mdpi.com/2079-9292/11/13/2076electron irradiationtransfer characteristicsdegradationSi/SiO<sub>2</sub> interfacefirst-principles calculationinterface charge density |
| spellingShingle | Jing Jiang Shaogang Wang Xu Liu Jianhui Liu Jun Li Dexiang Zhou Guoqi Zhang Huaiyu Ye Chunjian Tan Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET Electronics electron irradiation transfer characteristics degradation Si/SiO<sub>2</sub> interface first-principles calculation interface charge density |
| title | Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET |
| title_full | Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET |
| title_fullStr | Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET |
| title_full_unstemmed | Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET |
| title_short | Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET |
| title_sort | electron irradiation induced degradation of transfer characteristics in super junction vdmosfet |
| topic | electron irradiation transfer characteristics degradation Si/SiO<sub>2</sub> interface first-principles calculation interface charge density |
| url | https://www.mdpi.com/2079-9292/11/13/2076 |
| work_keys_str_mv | AT jingjiang electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT shaogangwang electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT xuliu electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT jianhuiliu electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT junli electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT dexiangzhou electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT guoqizhang electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT huaiyuye electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet AT chunjiantan electronirradiationinduceddegradationoftransfercharacteristicsinsuperjunctionvdmosfet |