FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are modeled and then scaled down to 10.7and 10-nm...
| Главные авторы: | , , , , , |
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| Формат: | Статья |
| Язык: | English |
| Опубликовано: |
IEEE
2018-01-01
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| Серии: | IEEE Journal of the Electron Devices Society |
| Предметы: | |
| Online-ссылка: | https://ieeexplore.ieee.org/document/8288601/ |