FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability

Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW are modeled and then scaled down to 10.7and 10-nm...

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Bibliografiska uppgifter
Huvudupphovsmän: Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Materialtyp: Artikel
Språk:English
Publicerad: IEEE 2018-01-01
Serie:IEEE Journal of the Electron Devices Society
Ämnen:
Drift-diffusion (DD)
Monte Carlo (MC) simulations
density gradient (DG) quantum corrections
Schrödinger equation based quantum corrections
Si FinFET
gate-all-around (GAA) nanowire (NW) FET
Länkar:https://ieeexplore.ieee.org/document/8288601/

Internet

https://ieeexplore.ieee.org/document/8288601/

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