Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K

In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compens...

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Bibliographic Details
Main Authors: Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Tsung-Yen Liu, Ray-Ming Lin
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Materials
Subjects:
AlGaN
ultraviolet
light emitting diodes
exciton emission
MOCVD
Online Access:https://www.mdpi.com/1996-1944/14/21/6699

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https://www.mdpi.com/1996-1944/14/21/6699

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