Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K
In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compens...
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MDPI AG
2021-11-01
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| Online Access: | https://www.mdpi.com/1996-1944/14/21/6699 |
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| author | Shih-Ming Huang Mu-Jen Lai Rui-Sen Liu Tsung-Yen Liu Ray-Ming Lin |
| author_facet | Shih-Ming Huang Mu-Jen Lai Rui-Sen Liu Tsung-Yen Liu Ray-Ming Lin |
| author_sort | Shih-Ming Huang |
| collection | DOAJ |
| description | In this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compensation allowed us to increase the p-AlGaN doping efficiency and hole numbers in the p-neutral region. This approach led to greater matching of the electron and hole numbers in the UVB and UVC emission quantum wells. Our UVB LED (sample A) exhibited clear exciton emission, with its peak near 306 nm, and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of the thermal energy effect of the temperature increase. Nevertheless, sample A displayed its exciton emission at temperatures of up to 368 K. In contrast, our corresponding UVC LED (sample B) only exhibited a Gaussian peak emission at a wavelength of approximately 272 nm. |
| first_indexed | 2024-03-10T05:57:19Z |
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| id | doaj.art-edf7f349a13e48ba99fb43ad0715f11f |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T05:57:19Z |
| publishDate | 2021-11-01 |
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| spelling | doaj.art-edf7f349a13e48ba99fb43ad0715f11f2023-11-22T21:16:07ZengMDPI AGMaterials1996-19442021-11-011421669910.3390/ma14216699Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 KShih-Ming Huang0Mu-Jen Lai1Rui-Sen Liu2Tsung-Yen Liu3Ray-Ming Lin4Department of Radiation Oncology, Chang Gung Memorial Hospital, Keelung 20401, TaiwanJiangxi Litkconn Academy of Optical Research, Longnan City 341700, ChinaJiangxi Litkconn Academy of Optical Research, Longnan City 341700, ChinaDepartment of Electronic Engineering and Institute of Electronics Engineering, Chang Gung University, Taoyuan 33302, TaiwanDepartment of Electronic Engineering and Institute of Electronics Engineering, Chang Gung University, Taoyuan 33302, TaiwanIn this study, we suppressed the parasitic emission caused by electron overflow found in typical ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs). The modulation of the p-layer structure and aluminum composition as well as a trade-off in the structure to ensure strain compensation allowed us to increase the p-AlGaN doping efficiency and hole numbers in the p-neutral region. This approach led to greater matching of the electron and hole numbers in the UVB and UVC emission quantum wells. Our UVB LED (sample A) exhibited clear exciton emission, with its peak near 306 nm, and a band-to-band emission at 303 nm. The relative intensity of the exciton emission of sample A decreased as a result of the thermal energy effect of the temperature increase. Nevertheless, sample A displayed its exciton emission at temperatures of up to 368 K. In contrast, our corresponding UVC LED (sample B) only exhibited a Gaussian peak emission at a wavelength of approximately 272 nm.https://www.mdpi.com/1996-1944/14/21/6699AlGaNultravioletlight emitting diodesexciton emissionMOCVD |
| spellingShingle | Shih-Ming Huang Mu-Jen Lai Rui-Sen Liu Tsung-Yen Liu Ray-Ming Lin Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K Materials AlGaN ultraviolet light emitting diodes exciton emission MOCVD |
| title | Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K |
| title_full | Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K |
| title_fullStr | Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K |
| title_full_unstemmed | Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K |
| title_short | Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K |
| title_sort | strain compensation and trade off design result in exciton emission at 306 nm from algan leds at temperatures up to 368 k |
| topic | AlGaN ultraviolet light emitting diodes exciton emission MOCVD |
| url | https://www.mdpi.com/1996-1944/14/21/6699 |
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