Measurement of short-range PSF in EBL
Experimental measurement for Short Range (SR) part of PSF in EBL is essential for at least three reasons: Proximity effect correction, the study of the resolution limit of electron lithography, and characterizing the beam size of an EBL instrument. In this work, we introduce a measurement technique...
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Format: | Article |
Language: | English |
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Elsevier
2024-03-01
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Series: | Micro and Nano Engineering |
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Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007224000017 |
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author | J. Shapiro M. Kahl L.V. Litvin |
author_facet | J. Shapiro M. Kahl L.V. Litvin |
author_sort | J. Shapiro |
collection | DOAJ |
description | Experimental measurement for Short Range (SR) part of PSF in EBL is essential for at least three reasons: Proximity effect correction, the study of the resolution limit of electron lithography, and characterizing the beam size of an EBL instrument. In this work, we introduce a measurement technique that is adequate for the above tasks with the purpose of evaluating its performance. Our approach is based on the following principles. We use a derivate of PSF – Line Spread Function (LSF) - because the latter is an extended object whose size can be averaged along its length during size measurement. Second, the use of thin negative resists like HSQ and PMMA operating in a negative tone avoids distortion due to lateral development. Third, the experimental check of normalization requirement validates the obtained PSFs. SR parts of PSFs in the range of 8–26 nm (FWHM) are accurately measured. |
first_indexed | 2024-03-08T03:29:52Z |
format | Article |
id | doaj.art-edf8b50501fb46bf83eebf274197b9b1 |
institution | Directory Open Access Journal |
issn | 2590-0072 |
language | English |
last_indexed | 2024-04-24T21:42:05Z |
publishDate | 2024-03-01 |
publisher | Elsevier |
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series | Micro and Nano Engineering |
spelling | doaj.art-edf8b50501fb46bf83eebf274197b9b12024-03-21T05:37:22ZengElsevierMicro and Nano Engineering2590-00722024-03-0122100238Measurement of short-range PSF in EBLJ. Shapiro0M. Kahl1L.V. Litvin2Raith GmbH, Dortmund 44263, GermanyRaith GmbH, Dortmund 44263, GermanyCorresponding author.; Raith GmbH, Dortmund 44263, GermanyExperimental measurement for Short Range (SR) part of PSF in EBL is essential for at least three reasons: Proximity effect correction, the study of the resolution limit of electron lithography, and characterizing the beam size of an EBL instrument. In this work, we introduce a measurement technique that is adequate for the above tasks with the purpose of evaluating its performance. Our approach is based on the following principles. We use a derivate of PSF – Line Spread Function (LSF) - because the latter is an extended object whose size can be averaged along its length during size measurement. Second, the use of thin negative resists like HSQ and PMMA operating in a negative tone avoids distortion due to lateral development. Third, the experimental check of normalization requirement validates the obtained PSFs. SR parts of PSFs in the range of 8–26 nm (FWHM) are accurately measured.http://www.sciencedirect.com/science/article/pii/S2590007224000017Electron beam lithographyPoint spread function |
spellingShingle | J. Shapiro M. Kahl L.V. Litvin Measurement of short-range PSF in EBL Micro and Nano Engineering Electron beam lithography Point spread function |
title | Measurement of short-range PSF in EBL |
title_full | Measurement of short-range PSF in EBL |
title_fullStr | Measurement of short-range PSF in EBL |
title_full_unstemmed | Measurement of short-range PSF in EBL |
title_short | Measurement of short-range PSF in EBL |
title_sort | measurement of short range psf in ebl |
topic | Electron beam lithography Point spread function |
url | http://www.sciencedirect.com/science/article/pii/S2590007224000017 |
work_keys_str_mv | AT jshapiro measurementofshortrangepsfinebl AT mkahl measurementofshortrangepsfinebl AT lvlitvin measurementofshortrangepsfinebl |