Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

We report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (∼500 kΩ) in the four-terminal resistivit...

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Bibliographic Details
Main Authors: W Yu, V Clericò, C Hernández Fuentevilla, X Shi, Y Jiang, D Saha, W K Lou, K Chang, D H Huang, G Gumbs, D Smirnov, C J Stanton, Z Jiang, V Bellani, Y Meziani, E Diez, W Pan, S D Hawkins, J F Klem
Format: Article
Language:English
Published: IOP Publishing 2018-01-01
Series:New Journal of Physics
Subjects:
topological insulators
quantum transport
magnetotransport
excitonic insulator
Online Access:https://doi.org/10.1088/1367-2630/aac595

Internet

https://doi.org/10.1088/1367-2630/aac595

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