Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect propagation through the epilayer. Stacking faults and o...

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Bibliographic Details
Main Authors: Gerard Colston, Kelly Turner, Arne Renz, Kushani Perera, Peter M. Gammon, Marina Antoniou, Vishal A. Shah
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Materials
Subjects:
3C-SiC
epitaxy
compliant substrate
stacking faults
conformal epitaxy
Online Access:https://www.mdpi.com/1996-1944/17/7/1587

Internet

https://www.mdpi.com/1996-1944/17/7/1587

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