A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures

In this review, an introduction to nanostructured films focusing on cerium oxide (CeO _2 ) as high dielectric constant ( k ) material for silicon-based metal-oxide-semiconductor devices, and subsequently background of using low k silicon dioxide as well as the transition to high k materials was pres...

Full description

Bibliographic Details
Main Authors: Saad Milad Ali Nsar, Zainuriah Hassan, Kuan Yew Cheong, Way Foong Lim
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ad52ef