Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise
The long-term reliability of InZnO (IZO) thin film transistors (TFTs) under a hydrogen-containing environment is researched. Hydrogen incorporation induces hydroxyl groups and oxygen vacancies, leading to the generation of electrons and extra random trap/emission processes in the IZO films. Conseque...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9514542/ |