Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/7/1253 |