Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel
The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degrada...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/1/53 |