Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

The memory characteristics of a flash memory device using c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO) thin film as a channel material were demonstrated. The CAAC-IGZO thin films can replace the current poly-silicon channel, which has reduced mobility because of grain-induced degrada...

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Bibliographic Details
Main Authors: Hoonhee Han, Seokmin Jang, Duho Kim, Taeheun Kim, Hyeoncheol Cho, Heedam Shin, Changhwan Choi
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Electronics
Subjects:
CAAC-IGZO
NAND flash
thin film transistor
high-k
Online Access:https://www.mdpi.com/2079-9292/11/1/53

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