Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor
We used capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is incre...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-07-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/14/2132 |