Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor
We used capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is incre...
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| Format: | Article |
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MDPI AG
2023-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/14/2132 |
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| author | Siva Pratap Reddy Mallem Peddathimula Puneetha Dong-Yeon Lee Yoonkap Kim Han-Jung Kim Ki-Sik Im Sung-Jin An |
| author_facet | Siva Pratap Reddy Mallem Peddathimula Puneetha Dong-Yeon Lee Yoonkap Kim Han-Jung Kim Ki-Sik Im Sung-Jin An |
| author_sort | Siva Pratap Reddy Mallem |
| collection | DOAJ |
| description | We used capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 10<sup>13</sup> eV<sup>−1</sup>∙cm<sup>−2</sup> at 1 kHz to 1.2 × 10<sup>11</sup> eV<sup>−1</sup>∙cm<sup>−2</sup> at 1 MHz. The power spectral density exhibits 1/<i>f</i>-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/<i>f</i>-noise features. At lower frequencies, the device exhibits 1/<i>f</i>-noise behavior, while beyond 1 kHz, it exhibits 1/<i>f</i><sup>2</sup>-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/<i>f</i><sup>2</sup>-noise features moves to the subordinated frequency (~10<sup>2</sup> Hz) side. |
| first_indexed | 2024-03-11T00:46:28Z |
| format | Article |
| id | doaj.art-eeb1a01611f54811be60aaebc476d026 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T00:46:28Z |
| publishDate | 2023-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-eeb1a01611f54811be60aaebc476d0262023-11-18T20:46:29ZengMDPI AGNanomaterials2079-49912023-07-011314213210.3390/nano13142132Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate TransistorSiva Pratap Reddy Mallem0Peddathimula Puneetha1Dong-Yeon Lee2Yoonkap Kim3Han-Jung Kim4Ki-Sik Im5Sung-Jin An6Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Republic of KoreaDepartment of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of KoreaDepartment of Robotics and Intelligent Machine Engineering, College of Mechanical and IT Engineering, Yeungnam University, Gyeongsan 38541, Republic of KoreaNano Electronic Materials and Components Research Center, Gumi Electronics and Information Technology Research Institute (GERI), Gumi 39171, Republic of KoreaNano Electronic Materials and Components Research Center, Gumi Electronics and Information Technology Research Institute (GERI), Gumi 39171, Republic of KoreaDepartment of Green Semiconductor System, Korea Polytechnics, Daegu Campus, Daegu 41765, Republic of KoreaDepartment of Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Republic of KoreaWe used capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 10<sup>13</sup> eV<sup>−1</sup>∙cm<sup>−2</sup> at 1 kHz to 1.2 × 10<sup>11</sup> eV<sup>−1</sup>∙cm<sup>−2</sup> at 1 MHz. The power spectral density exhibits 1/<i>f</i>-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/<i>f</i>-noise features. At lower frequencies, the device exhibits 1/<i>f</i>-noise behavior, while beyond 1 kHz, it exhibits 1/<i>f</i><sup>2</sup>-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/<i>f</i><sup>2</sup>-noise features moves to the subordinated frequency (~10<sup>2</sup> Hz) side.https://www.mdpi.com/2079-4991/13/14/2132carrier trap1/<i>f</i>-noisenanowireAlGaN/GaN |
| spellingShingle | Siva Pratap Reddy Mallem Peddathimula Puneetha Dong-Yeon Lee Yoonkap Kim Han-Jung Kim Ki-Sik Im Sung-Jin An Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor Nanomaterials carrier trap 1/<i>f</i>-noise nanowire AlGaN/GaN |
| title | Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor |
| title_full | Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor |
| title_fullStr | Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor |
| title_full_unstemmed | Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor |
| title_short | Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor |
| title_sort | carrier trap and their effects on the surface and core of algan gan nanowire wrap gate transistor |
| topic | carrier trap 1/<i>f</i>-noise nanowire AlGaN/GaN |
| url | https://www.mdpi.com/2079-4991/13/14/2132 |
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