Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor

We used capacitance–voltage (<i>C</i>–<i>V</i>), conductance–voltage (<i>G</i>–<i>V</i>), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is incre...

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Bibliographic Details
Main Authors: Siva Pratap Reddy Mallem, Peddathimula Puneetha, Dong-Yeon Lee, Yoonkap Kim, Han-Jung Kim, Ki-Sik Im, Sung-Jin An
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
carrier trap
1/<i>f</i>-noise
nanowire
AlGaN/GaN
Online Access:https://www.mdpi.com/2079-4991/13/14/2132

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