Radiation Defects in Heterostructures 3C-SiC/4H-SiC
The effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It...
| Egile Nagusiak: | , , , , |
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| Formatua: | Artikulua |
| Hizkuntza: | English |
| Argitaratua: |
MDPI AG
2019-02-01
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| Saila: | Crystals |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2073-4352/9/2/115 |