Radiation Defects in Heterostructures 3C-SiC/4H-SiC
The effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It...
| Hlavní autoři: | , , , , |
|---|---|
| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
MDPI AG
2019-02-01
|
| Edice: | Crystals |
| Témata: | |
| On-line přístup: | https://www.mdpi.com/2073-4352/9/2/115 |