Radiation Defects in Heterostructures 3C-SiC/4H-SiC

Radiation Defects in Heterostructures 3C-SiC/4H-SiC

The effect of 8 MeV proton irradiation on n-3<i>C</i>-SiC epitaxial layers grown by sublimation on semi-insulating 4<i>H</i>-SiC substrates has been studied. Changes in sample parameters were recorded using the Hall-effect method and judged from photoluminescence spectra. It...

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Detalles Bibliográficos
Autores principales: A.A. Lebedev, G.A. Oganesyan, V.V. Kozlovski, I.A. Eliseyev, P.V. Bulat
Formato: Artículo
Lenguaje:English
Publicado: MDPI AG 2019-02-01
Colección:Crystals
Materias:
sublimation epitaxy
3C-SiC
proton irradiation
structural defects
photoluminescence
Hall effect
Raman spectroscopy
Acceso en línea:https://www.mdpi.com/2073-4352/9/2/115

Internet

https://www.mdpi.com/2073-4352/9/2/115

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