Effects of electrode material and configuration on the characteristics of planar resistive switching devices

Effects of electrode material and configuration on the characteristics of planar resistive switching devices

We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work...

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Bibliographic Details
Main Authors: H. Y. Peng, L. Pu, J. C. Wu, D. Cha, J. H. Hong, W. N. Lin, Y. Y. Li, J. F. Ding, A. David, K. Li, T. Wu
Format: Article
Language:English
Published: AIP Publishing LLC 2013-11-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4827597

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http://dx.doi.org/10.1063/1.4827597

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