Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical pr...

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Bibliographic Details
Main Authors: Ruixing Feng, Felipe Kremer, David J. Sprouster, Sahar Mirzaei, Stefan Decoster, Chris J. Glover, Scott A. Medling, John Lundsgaard Hansen, Arne Nylandsted-Larsen, Salvy P. Russo, Mark C. Ridgway
Format: Article
Language:English
Published: Taylor & Francis Group 2017-01-01
Series:Materials Research Letters
Subjects:
SiGe
C + In co-doping
X-ray absorption fine structure
Hall Effect
Online Access:http://dx.doi.org/10.1080/21663831.2016.1169229

Internet

http://dx.doi.org/10.1080/21663831.2016.1169229

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