Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping
In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical pr...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2017-01-01
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| Series: | Materials Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/21663831.2016.1169229 |
| _version_ | 1811333231858941952 |
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| author | Ruixing Feng Felipe Kremer David J. Sprouster Sahar Mirzaei Stefan Decoster Chris J. Glover Scott A. Medling John Lundsgaard Hansen Arne Nylandsted-Larsen Salvy P. Russo Mark C. Ridgway |
| author_facet | Ruixing Feng Felipe Kremer David J. Sprouster Sahar Mirzaei Stefan Decoster Chris J. Glover Scott A. Medling John Lundsgaard Hansen Arne Nylandsted-Larsen Salvy P. Russo Mark C. Ridgway |
| author_sort | Ruixing Feng |
| collection | DOAJ |
| description | In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples. |
| first_indexed | 2024-04-13T16:48:52Z |
| format | Article |
| id | doaj.art-eefc4c9e29444e4d9b3ccf1b28c9ebff |
| institution | Directory Open Access Journal |
| issn | 2166-3831 |
| language | English |
| last_indexed | 2024-04-13T16:48:52Z |
| publishDate | 2017-01-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Materials Research Letters |
| spelling | doaj.art-eefc4c9e29444e4d9b3ccf1b28c9ebff2022-12-22T02:39:00ZengTaylor & Francis GroupMaterials Research Letters2166-38312017-01-0151293410.1080/21663831.2016.11692291169229Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-DopingRuixing Feng0Felipe Kremer1David J. Sprouster2Sahar Mirzaei3Stefan Decoster4Chris J. Glover5Scott A. Medling6John Lundsgaard Hansen7Arne Nylandsted-Larsen8Salvy P. Russo9Mark C. Ridgway10Australian National UniversityAustralian National UniversityBrookhaven National LaboratoryAustralian National UniversityKU Leuven, Instituut voor Kern-en StralingsfysicaAustralian SynchrotronAustralian National UniversityAarhus UniversityAarhus UniversityRMIT UniversityAustralian National UniversityIn this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping, the solid solubility of In in Si0.35Ge0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.http://dx.doi.org/10.1080/21663831.2016.1169229SiGeC + In co-dopingX-ray absorption fine structureHall Effect |
| spellingShingle | Ruixing Feng Felipe Kremer David J. Sprouster Sahar Mirzaei Stefan Decoster Chris J. Glover Scott A. Medling John Lundsgaard Hansen Arne Nylandsted-Larsen Salvy P. Russo Mark C. Ridgway Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping Materials Research Letters SiGe C + In co-doping X-ray absorption fine structure Hall Effect |
| title | Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping |
| title_full | Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping |
| title_fullStr | Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping |
| title_full_unstemmed | Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping |
| title_short | Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping |
| title_sort | enhanced electrical activation in in implanted si0 35ge0 65 by c co doping |
| topic | SiGe C + In co-doping X-ray absorption fine structure Hall Effect |
| url | http://dx.doi.org/10.1080/21663831.2016.1169229 |
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