Analysis of Cu-Graphene Interconnects
Due to its ultrathin feature, graphene has been recently proposed as diffusion barrier layer for Cu wires. This paper is geared toward developing an equivalent single-conductor (ESC) transmission-line (TL) model for analysis of Cu-graphene interconnects, i.e., Cu wires encapsulated with graphene bar...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8458119/ |
| _version_ | 1818853906874105856 |
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| author | Zi-Han Cheng Wen-Sheng Zhao Da-Wei Wang Jing Wang Linxi Dong Gaofeng Wang Wen-Yan Yin |
| author_facet | Zi-Han Cheng Wen-Sheng Zhao Da-Wei Wang Jing Wang Linxi Dong Gaofeng Wang Wen-Yan Yin |
| author_sort | Zi-Han Cheng |
| collection | DOAJ |
| description | Due to its ultrathin feature, graphene has been recently proposed as diffusion barrier layer for Cu wires. This paper is geared toward developing an equivalent single-conductor (ESC) transmission-line (TL) model for analysis of Cu-graphene interconnects, i.e., Cu wires encapsulated with graphene barriers. Based on the ESC TL model, electrical performances of Cu-graphene interconnects are examined and evaluated. It is shown that the time delay and temperature rise can be reduced by replacing the conventional diffusion barriers in the Cu/low-k interconnect with the graphene barriers. |
| first_indexed | 2024-12-19T07:44:16Z |
| format | Article |
| id | doaj.art-ef03cf7fad3942d8b4d292d2cc0c8a52 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-19T07:44:16Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-ef03cf7fad3942d8b4d292d2cc0c8a522022-12-21T20:30:24ZengIEEEIEEE Access2169-35362018-01-016534995350810.1109/ACCESS.2018.28694688458119Analysis of Cu-Graphene InterconnectsZi-Han Cheng0Wen-Sheng Zhao1https://orcid.org/0000-0002-2507-5776Da-Wei Wang2Jing Wang3Linxi Dong4https://orcid.org/0000-0003-2788-1488Gaofeng Wang5https://orcid.org/0000-0001-8599-7249Wen-Yan Yin6MOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaMOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaZhejiang Provincial Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, ChinaMOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaMOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaMOE Key Laboratory of RF Circuits and Systems, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaZhejiang Provincial Key Laboratory of Advanced Micro-Nano Electronic Devices and Smart Systems, Innovative Institute of Electromagnetic Information and Electronic Integration, Zhejiang University, Hangzhou, ChinaDue to its ultrathin feature, graphene has been recently proposed as diffusion barrier layer for Cu wires. This paper is geared toward developing an equivalent single-conductor (ESC) transmission-line (TL) model for analysis of Cu-graphene interconnects, i.e., Cu wires encapsulated with graphene barriers. Based on the ESC TL model, electrical performances of Cu-graphene interconnects are examined and evaluated. It is shown that the time delay and temperature rise can be reduced by replacing the conventional diffusion barriers in the Cu/low-k interconnect with the graphene barriers.https://ieeexplore.ieee.org/document/8458119/Cu-graphene interconnectdiffusion barrier layerequivalent single-conductor (ESC) modeltransfer functiontime delay |
| spellingShingle | Zi-Han Cheng Wen-Sheng Zhao Da-Wei Wang Jing Wang Linxi Dong Gaofeng Wang Wen-Yan Yin Analysis of Cu-Graphene Interconnects IEEE Access Cu-graphene interconnect diffusion barrier layer equivalent single-conductor (ESC) model transfer function time delay |
| title | Analysis of Cu-Graphene Interconnects |
| title_full | Analysis of Cu-Graphene Interconnects |
| title_fullStr | Analysis of Cu-Graphene Interconnects |
| title_full_unstemmed | Analysis of Cu-Graphene Interconnects |
| title_short | Analysis of Cu-Graphene Interconnects |
| title_sort | analysis of cu graphene interconnects |
| topic | Cu-graphene interconnect diffusion barrier layer equivalent single-conductor (ESC) model transfer function time delay |
| url | https://ieeexplore.ieee.org/document/8458119/ |
| work_keys_str_mv | AT zihancheng analysisofcugrapheneinterconnects AT wenshengzhao analysisofcugrapheneinterconnects AT daweiwang analysisofcugrapheneinterconnects AT jingwang analysisofcugrapheneinterconnects AT linxidong analysisofcugrapheneinterconnects AT gaofengwang analysisofcugrapheneinterconnects AT wenyanyin analysisofcugrapheneinterconnects |