Threshold Switching Characteristics of Nb/NbO<sub>2</sub>/TiN Vertical Devices
We have observed threshold switching (TS) with minimal hysteresis and a small threshold electric field (60-90 kV/cm) in Nb/NbO<sub>2</sub>/TiN structures. The TS was unipolar with certain repeatability. A less sharp but still sizable change in the device resistance can be observed up to...
| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
IEEE
2016-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/7337365/ |