A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-04-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/4/650 |