A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/4/650 |
| _version_ | 1827745405643784192 |
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| author | Hongyu Cheng Wenmao Li Peiran Wang Jianguo Chen Qing Wang Hongyu Yu |
| author_facet | Hongyu Cheng Wenmao Li Peiran Wang Jianguo Chen Qing Wang Hongyu Yu |
| author_sort | Hongyu Cheng |
| collection | DOAJ |
| description | Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss. |
| first_indexed | 2024-03-11T05:07:34Z |
| format | Article |
| id | doaj.art-ef0d889061f5446184a788f16839fc70 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T05:07:34Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-ef0d889061f5446184a788f16839fc702023-11-17T18:51:32ZengMDPI AGCrystals2073-43522023-04-0113465010.3390/cryst13040650A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)Hongyu Cheng0Wenmao Li1Peiran Wang2Jianguo Chen3Qing Wang4Hongyu Yu5School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaFounder Microelectronics International Co., Ltd., Shenzhen 518116, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaSchool of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, ChinaAchieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss.https://www.mdpi.com/2073-4352/13/4/650TED MOSSchottky contactreverse recovery |
| spellingShingle | Hongyu Cheng Wenmao Li Peiran Wang Jianguo Chen Qing Wang Hongyu Yu A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD) Crystals TED MOS Schottky contact reverse recovery |
| title | A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD) |
| title_full | A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD) |
| title_fullStr | A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD) |
| title_full_unstemmed | A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD) |
| title_short | A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD) |
| title_sort | fast recovery sic ted mos mosfet with schottky barrier diode sbd |
| topic | TED MOS Schottky contact reverse recovery |
| url | https://www.mdpi.com/2073-4352/13/4/650 |
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