High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs

High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs

This paper proposed a fabrication of p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) via green nanosecond laser crystallization (GNSLC) and counter doping (CD). By using the GNSLC, the nano-crystalline-Ge (nc-Ge) with a grain size of 80 nm could be turned into polycrystalline...

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Bibliographic Details
Main Authors: Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, Kuan-Neng Chen
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Monolithic 3D integration
polycrystalline Ge (poly-Ge)
tri-gate field-effect transistors (Tri-gate FETs)
green nanosecond laser crystallization (GNSLC)
counter doping (CD)
Online Access:https://ieeexplore.ieee.org/document/10109116/

Internet

https://ieeexplore.ieee.org/document/10109116/

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