Van der Waals enabled formation and integration of ultrathin high-κ dielectrics on 2D semiconductors

Van der Waals enabled formation and integration of ultrathin high-κ dielectrics on 2D semiconductors

Abstract A thin dielectric layer is an important constituent element in 2D materials-based electronics and photonics. Current methods of using hexagonal boron nitride (hBN) and direct deposition of dielectric layer induce either high leakage current or unintentional doping and defect. Here we report...

Full description

Bibliographic Details
Main Authors: Matej Sebek, Zeng Wang, Norton Glen West, Ming Yang, Darren Chi Jin Neo, Xiaodi Su, Shijie Wang, Jisheng Pan, Nguyen Thi Kim Thanh, Jinghua Teng
Format: Article
Language:English
Published: Nature Portfolio 2024-02-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-024-00443-2

Internet

https://doi.org/10.1038/s41699-024-00443-2

Similar Items