Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the pr...

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Bibliographic Details
Main Authors: L. van Deurzen, J. Singhal, J. Encomendero, N. Pieczulewski, C. S. Chang, Y. Cho, D. A. Muller, H. G. Xing, D. Jena, O. Brandt, J. Lähnemann
Format: Article
Language:English
Published: AIP Publishing LLC 2023-08-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0158390

Internet

http://dx.doi.org/10.1063/5.0158390

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