Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the pr...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0158390 |
| _version_ | 1797689635021783040 |
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| author | L. van Deurzen J. Singhal J. Encomendero N. Pieczulewski C. S. Chang Y. Cho D. A. Muller H. G. Xing D. Jena O. Brandt J. Lähnemann |
| author_facet | L. van Deurzen J. Singhal J. Encomendero N. Pieczulewski C. S. Chang Y. Cho D. A. Muller H. G. Xing D. Jena O. Brandt J. Lähnemann |
| author_sort | L. van Deurzen |
| collection | DOAJ |
| description | Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ5 free exciton binding energy of 57 meV. |
| first_indexed | 2024-03-12T01:48:51Z |
| format | Article |
| id | doaj.art-ef566f1a6da54f4088a6e8170301ccfa |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-03-12T01:48:51Z |
| publishDate | 2023-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-ef566f1a6da54f4088a6e8170301ccfa2023-09-08T16:24:51ZengAIP Publishing LLCAPL Materials2166-532X2023-08-01118081109081109-910.1063/5.0158390Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxyL. van Deurzen0J. Singhal1J. Encomendero2N. Pieczulewski3C. S. Chang4Y. Cho5D. A. Muller6H. G. Xing7D. Jena8O. Brandt9J. Lähnemann10School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USADepartment of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USADepartment of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USASchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USADepartment of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USASchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USADepartment of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USASchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USAPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., 10117 Berlin, GermanyPaul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., 10117 Berlin, GermanyUsing low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ5 free exciton binding energy of 57 meV.http://dx.doi.org/10.1063/5.0158390 |
| spellingShingle | L. van Deurzen J. Singhal J. Encomendero N. Pieczulewski C. S. Chang Y. Cho D. A. Muller H. G. Xing D. Jena O. Brandt J. Lähnemann Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy APL Materials |
| title | Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy |
| title_full | Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy |
| title_fullStr | Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy |
| title_full_unstemmed | Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy |
| title_short | Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy |
| title_sort | excitonic and deep level emission from n and al polar homoepitaxial aln grown by molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/5.0158390 |
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