Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the pr...
Main Authors: | L. van Deurzen, J. Singhal, J. Encomendero, N. Pieczulewski, C. S. Chang, Y. Cho, D. A. Muller, H. G. Xing, D. Jena, O. Brandt, J. Lähnemann |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-08-01
|
Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0158390 |
Similar Items
-
Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
by: Jashan Singhal, et al.
Published: (2022-09-01) -
Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
by: Jashan Singhal, et al.
Published: (2022-11-01) -
Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate
by: Matthew Whiteside, et al.
Published: (2020-11-01) -
Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
by: Whiteside, Matthew, et al.
Published: (2021) -
High-Quality AlN Grown on Si(111) Substrate by Epitaxial Lateral Overgrowth
by: Yingnan Huang, et al.
Published: (2023-03-01)