Influence of surface structure of (0001) sapphire substrate on the elimination of small-angle grain boundary in AlN epilayer
AlN epilayers were grown on (0001) sapphire substrates by metal-organic vapor phase epitaxy, and the influence of the substrate’s surface structure on the formation of in-plane rotation domain is studied. The surface structure is found to change with increasing temperature under H2 ambient. The ML s...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4931159 |