High-temperature oxidation behaviour of Si3N4 nanowires with different diameters

α-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significant...

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Bibliographic Details
Main Authors: Zhao Shuang, Yang Feiyue, Chen Jun, Li Kunfeng, Fei Zhifang, Yang Zichun
Format: Article
Language:English
Published: University of Novi Sad 2023-03-01
Series:Processing and Application of Ceramics
Subjects:
Online Access:https://www.doiserbia.nb.rs/img/doi/1820-6131/2023/1820-61312301039Z.pdf