Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures. In the present work, molecular dynamics (MD) is conducted to investigate the irradiation effects and mechanical response changes of GaAs nan...

Full description

Bibliographic Details
Main Authors: Tongxuan Jia, Zujun Wang, Minghua Tang, Yuanyuan Xue, Gang Huang, Xu Nie, Shankun Lai, Wuying Ma, Baoping He, Shilong Gou
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Nanomaterials
Subjects:
GaAs NWs
defect mechanisms
molecular dynamics
mechanical properties
defects
Online Access:https://www.mdpi.com/2079-4991/12/4/611

Internet

https://www.mdpi.com/2079-4991/12/4/611

Similar Items