Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing

The integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employ...

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Bibliographic Details
Main Authors: Rene Wutzler, Lars Rebohle, Slawomir Prucnal, Jörg Grenzer, René Hübner, Roman Böttger, Wolfgang Skorupa, Manfred Helm
Format: Article
Language:English
Published: IOP Publishing 2017-01-01
Series:New Journal of Physics
Subjects:
ion implantation
flash lamp annealing
III–V integration into silicon
nanostructure
InGaAs
liquid phase epitaxy
Online Access:https://doi.org/10.1088/1367-2630/aa66a5

Internet

https://doi.org/10.1088/1367-2630/aa66a5

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