Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing
The integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employ...
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| Language: | English |
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IOP Publishing
2017-01-01
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| Series: | New Journal of Physics |
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| Online Access: | https://doi.org/10.1088/1367-2630/aa66a5 |
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| author | Rene Wutzler Lars Rebohle Slawomir Prucnal Jörg Grenzer René Hübner Roman Böttger Wolfgang Skorupa Manfred Helm |
| author_facet | Rene Wutzler Lars Rebohle Slawomir Prucnal Jörg Grenzer René Hübner Roman Böttger Wolfgang Skorupa Manfred Helm |
| author_sort | Rene Wutzler |
| collection | DOAJ |
| description | The integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate In _x Ga _1− _x As nanocrystals and to study their crystallization process in thin Si layers. The implantation fluence ratio of Ga and In ions has been varied to tailor the final nanocrystal composition. Raman spectroscopy and x-ray diffraction analyses verify the formation of ternary III–V nanocrystals within the Si layer. Transmission electron microscopy reveals single-crystalline precipitates with a low number of defects. A liquid epitaxy mechanism is used to describe the formation process of III–V nanocrystals after melting of the implanted thin Si layer by flash lamp annealing. The fabricated In _x Ga _1− _x As nanocrystals are mainly Ga-rich with respect to the implanted Ga/In ratio. |
| first_indexed | 2024-03-12T16:39:00Z |
| format | Article |
| id | doaj.art-ef927f89de6a48c3bef90f4edf4ad4aa |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:39:00Z |
| publishDate | 2017-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-ef927f89de6a48c3bef90f4edf4ad4aa2023-08-08T14:37:43ZengIOP PublishingNew Journal of Physics1367-26302017-01-0119606301910.1088/1367-2630/aa66a5Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealingRene Wutzler0Lars Rebohle1Slawomir Prucnal2Jörg Grenzer3René Hübner4Roman Böttger5Wolfgang Skorupa6Manfred Helm7Helmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyHelmholtz-Zentrum Dresden—Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, D-01328 Dresden, GermanyThe integration of high-mobility III–V compound semiconductors emerges as a promising route for Si device technologies to overcome the limits of further down-scaling. In this paper, a non-conventional approach of the combination of ion beam implantation with short-time flash lamp annealing is employed to fabricate In _x Ga _1− _x As nanocrystals and to study their crystallization process in thin Si layers. The implantation fluence ratio of Ga and In ions has been varied to tailor the final nanocrystal composition. Raman spectroscopy and x-ray diffraction analyses verify the formation of ternary III–V nanocrystals within the Si layer. Transmission electron microscopy reveals single-crystalline precipitates with a low number of defects. A liquid epitaxy mechanism is used to describe the formation process of III–V nanocrystals after melting of the implanted thin Si layer by flash lamp annealing. The fabricated In _x Ga _1− _x As nanocrystals are mainly Ga-rich with respect to the implanted Ga/In ratio.https://doi.org/10.1088/1367-2630/aa66a5ion implantationflash lamp annealingIII–V integration into siliconnanostructureInGaAsliquid phase epitaxy |
| spellingShingle | Rene Wutzler Lars Rebohle Slawomir Prucnal Jörg Grenzer René Hübner Roman Böttger Wolfgang Skorupa Manfred Helm Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing New Journal of Physics ion implantation flash lamp annealing III–V integration into silicon nanostructure InGaAs liquid phase epitaxy |
| title | Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing |
| title_full | Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing |
| title_fullStr | Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing |
| title_full_unstemmed | Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing |
| title_short | Formation of InxGa1−xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing |
| title_sort | formation of inxga1 xas nanocrystals in thin si layers by ion implantation and flash lamp annealing |
| topic | ion implantation flash lamp annealing III–V integration into silicon nanostructure InGaAs liquid phase epitaxy |
| url | https://doi.org/10.1088/1367-2630/aa66a5 |
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