In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

In situ monitoring of stress change in GeTe thin films during thermal annealing and crystallization

Stress changes in GeTe thin films on silicon have been studied in situ as a function of temperature by optical curvature measurements. Crystallization of the initially amorphous layers is evidenced by a steep tensile stress buildup. The crystallization temperature is shown to be thickness-dependent...

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Bibliographic Details
Main Authors: B. Ben Yahia, M.S. Amara, M. Gallard, N. Burle, S. Escoubas, C. Guichet, M. Putero, C. Mocuta, M.-I. Richard, R. Chahine, C. Sabbione, M. Bernard, L. Fellouh, P. Noé, O. Thomas
Format: Article
Language:English
Published: Elsevier 2018-11-01
Series:Micro and Nano Engineering
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007218300030

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http://www.sciencedirect.com/science/article/pii/S2590007218300030

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